Typical Performance Characteristics
Resolution |
Peaking Time |
124 eV FWHM |
4 µs |
126 eV FWHM |
1 µs |
134 eV FWHM |
0.2 µs |
Table 1. Resolution vs. Peaking Time for the FAST SDD®.
Figure 1. Resolution vs. peaking time for the FAST SDD® and standard SDD at 210 K.
Figure 2. Resolution vs. peaking time at different detector temperatures. Note that there is little change in resolution over temperature for the peaking times that are typically used with the FAST SDD® (< />
Figure 4. Throughput for the FAST SDD®.
Figure 5. Resolution vs. Input Counts Rate (ICR) for Various Peaking Times for FAST SDD®.
Figure 5. Energy resolution, efficiency, and X-ray energy: This plot shows how the intrinsic efficiency (top) and energy resolution (bottom) depend on the X-ray energy.
In the bottom plot, the black curve represents “Fano broadening”, the theoretical limit with a Si based detectors, arising from quantum fluctuations in the charge production process. The colored curves represent the combination of Fano broadening and intrinsic electronic noise under optimum conditions (full cooling and long peaking time). The detector selection is most important at the lowest energies because Fano broadening dominates at high enough energies.
In the top plot, the efficiency at low energies is determined by transmission through the window and detector dead layer. The efficiency at high energies is determined by attenuation in the active depth of the detector. A Si detector with Be window is recommended between about 2 and 30 keV. A Si detector with a C1 or C2 window is recommended at lower energies, while a CdTe detector is best at energies above 30 keV.
Efficiency Package: A ZIP file of coefficients and a FAQ about efficiency. This package is provided for general information. It should not be used as a basis for critical quantitative analysis.